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	题名	作者	年代	出处	被引量
1	A study on the photoresponses in GaAs n-channel optical detectors显示文摘	WEI C J KLEIN H J	1982	IEEE Transactions on Electron Devices1982，29，9：	2
2	A nonfundamental theory of low-frequency noise in semiconductor devices 显示文摘	Saeed Mohammadi Dimitris Pavlidis	2000	IEEE Transactions on Electron Devices2000，47，：	2
3	High-voltage planar junctions investigated by the OBIC method 显示文摘	Stengl R	1987	IEEE Transactions on Electron Devices1987，34，4：	2
4	Determination of the spatial variation of the carrier lifetime in a proton-irradiated Si n+-n-p+diode by optical-beam-induced currrent measurements 显示文摘	Flohr T Reinhard H	1990	IEEE Transactions on Electron Devices1990，37，9：	2
5	Room-temperature single-electron memory 显示文摘	Yano K Ishii T Hasimoto T Kobayashi F	1994	IEEE Transactions on Electron Devices1994，41，9：	1
6	A shortchannel DC SPICE model for polysilicon thin-film transistors including temperature effects 显示文摘	Jacunski M D Shur M S Owusu A A	1999	IEEE Transactions on Electron Devices1999，46，6：	1
7	Efficiency and power density potential of combustion-driven thermophotovoltaic systems using GaSb Photovoltaic Cells显示文摘	Zenker M	2001	IEEE Transactions on Electron Devices2001，48，2：	1
8	Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire显示文摘	EGAWA T ZHAO G Y ISHIKAWA H	2001	IEEE Transactions on Electron Devices2001，48，3：	1
9	Linearizability of TWT as using predistortion techniques显示文摘	Qiu J X	2005	IEEE Transactions on Electron Devices2005，52，5：	1
10	Short-channel effect limitations on high-frequency operation of A1GaN/ GaN HEMTs for T-gate devices 显示文摘	Jessen G H Fitch R C Gillespie J K	2007	IEEE Transactions on Electron Devices2007，54，10：	1
11	Remote fiber-optic biosensors based on evanescent-excited fluoro-immunoassay:Concept and progress 显示文摘	Andrade J D Vanwagenen R A Gregonis D E	1985	IEEE Transactions on Electron Devices1985，32，7：	1
12	PZT MIM Capacitor With OxygenDoped Ru-Electrodes for Embedded FeRAM Devices显示文摘	Naoya Inoue Naoya Furutake Akio Toda Munehiro Tads Yoshihiro Hayashi	2005	IEEE Transactions on Electron Device2005，52，：	1
13	Analytical model for the electric field distribution in SOI resurf and TMBS structures显示文摘	Merchant S	1999	IEEE Transaction on Electron Devices1999，46，6：	1
14	Iusulation foe metallic glasses in pulse power system显示文摘	Smith C H	1991	IEEE Transactions on Electron Devices1991，38，4：	1
15	High-power recessed-gate AlGaN-GaN HFET with a field-modulating plate显示文摘	Yasuhiro Okamoto Yuji Ando Tatsuo Nakayama	2004	IEEE Transactions on Electron Devices2004，51，12：	1
16	Modeling of Carrier Mobility Against Carrier Concentration in Arsenic Boron-doped Silicon显示文摘	Masetti G Severi M Solmi S	1983	IEEE Transactions on Electronic Devices1983，30，7：	1
17	A three-step method for the De- Embedding of high-frequency S-parameter measure- ments 显示文摘	Cho H Burk D	1991	IEEE Transaction on Electron Devices1991，38，6：	1
18	Analysis of lateral DMOS power devices under ESD stress conditions显示文摘	MERGENS M P J WILKENING W METTLER S WOLF H SRICKER A FICHTNER W	2000	IEEE Transactions on Electron Devices2000，47，11：	1
19	Dual material gategraded channel-gate stack surrounding gate MOSFET:analytical threshold voltage and subthreshold swing models显示文摘	Aouaj A Bouziane A Nouacry A	2010	IEEE Transactions on Electron Devices2010，11，10：	1
20	Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment:from depletion mode to enhancement mode显示文摘	Cai Y Zhou Y Lau K M	2006	IEEE Transactions on Electron Devices2006，53，9：	1

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