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	题名	作者	年代	出处	被引量
1	Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's显示文摘	Zanoni E Crabbe E F	1993	IEEE Elec Dev Lett1993，14，2：	2
2	ESD reliability and protection schemes in SOI CMOS output buffers显示文摘	Chan M S Yuen S S Ma Z J	1995	IEEE Trans Elec Dev1995，42，10：	2
3	Properties of low-pressure CVD tungsten silicide for MOS VLSI interconnection显示文摘	Saraswat K-C Boors P-L Fair J-A	1983	IEEE Trans Elec Dev1983，30，11：	2
4	Film properties of MoSi2 and their application to self-aligned MoSi2 gate MOSFET显示文摘	Mochizuki T Tsujimara T Kashiwagi M	1980	IEEE Trans Elec Dev1980，27，8：	2
5	A new MoSi2 / thin poly-Si gate process technology without dielectric degradation of a gate oxide显示文摘	Fukumoto M Shinohara A Okada S	1984	IEEE Trans Elec Dev1984，31，10：	2
6	Compact distributed RLC interconnect models-Part II: coupled line transient expressions and peak crosstalk in multilevel networks显示文摘	Davis J A Meindl J D	2000	IEEE Trans Elec Dev2000，47，11：	2
7	MOS characteristics of ultrathin NO-grown oxynitrides显示文摘	BHAT M KIM J YOON G W	1994	IEEE Trans Elec Dev1994，15，10：	1
8	Demonstration of schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel 显示文摘	TAN E J PEY K L SINGH N	2008	IEEE Elec Dev Lett2008，29，10：	1
9	Fermi pinninginduced thermal instability of metal-gate work function 显示文摘	YU H Y REN C YEO Y C	2004	IEEE Elec Dev Lett2004，25，5：	1
10	Scaling fully depleted SOI CMOS显示文摘	Trivedi V P Fossum J G	2003	IEEE Trans Elec Dev2003，50，10：	1
11	Scalable compact circuit model for differential spiral transformers in CMOS RFICs 显示文摘	GAO W JIAO C LIU T	2006	IEEE Trans Elec Dev2006，53，9：	1
12	Double gate MOSFET sub-threshold circuit for ultra low power applications显示文摘	KIM J J ROY K	2004	IEEE Trans Elec Dev2004，51，9：	1
13	Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET's显示文摘	YANO H KATAFUCHI F KIMOTO T	1999	IEEE Trans Elec Dev1999，46，3：	1
14	Relation between oxide thickness and the breakdown voltage of a planar junction with field relief electrode 显示文摘	Patrick V O Alonas G P	1979	IEEE Trans Elec Dev1979，26，7：	1
15	Hot carrier induced degradation in mesaisolated n-channel SOI MOSFET's operating in a BiMOS Mode 显示文摘	Huang R	2001	IEEE Trails Elec Dev2001，48，8：	1
16	A 210-GHz fr SiGe HBT with a non-self-aligned structure 显示文摘	Jeng S J Tagannathan B Rich J S	2001	IEEE Elec Dev Lett2001，22，11：	1
17	Improvement of junction leakage of nickel silicided junction by a Ti-capping layer显示文摘	Hou T-H Lei T-F Chao T-S	1999	IEEE Trans Elec Dev Lett1999，20，11：	1
18	Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon显示文摘	Fiorenza J G del Alamo J A	2002	IEEE Trans Elec Dev2002，49，4：	1
19	SiGe BiCMOS technology for RF circuit applications 显示文摘	Racanelli M Kempf P	2005	IEEE Trans Elec Dev2005，52，7：	1
20	Physical modeling of temperature dependences of SOI CMOS devices and circuit including selfheating显示文摘	Workman Glenn O Fossum Jerry G Krishnan Srinath	1998	IEEE Trans Elec Dev1998，45，1：	1

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