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1093篇 您的检索式：期刊名="Electron device Letters IEEE"

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	题名	作者	年代	出处	被引量
1	1800V NPN Bipolar Junction Transistors in 4H-SiC显示文摘	Ryu S H Agarwal A K Singh R	2001	IEEE Electron Device Letter2001，22，2：	2
2	A rapid-response,high-sensitivity nanophase humidity sensor for respiratory monitoring 显示文摘	Kalkan A K Li Handong O'Brien C J	2004	Electron Device Letters IEEE2004，25，8：	1
3	Gate Oxide Damage Reduction Using a Protective Dielectric Layer显示文摘	Gabriel C T Weling M G	1994	IEEE Electron Device Letter1994，15，8：	1
4	Continuous analytic Ⅰ-Ⅴ model for surrounding-gate MOSFETs显示文摘	JIMENEZ D SUNE J MARSAL L F	2004	IEEE Electron Devices Letters2004，25，8：	1
5	A novel silicon photo- voltaic cell using a low-temperature quasi-epitaxial silicon emitter 显示文摘	Farrokh-Baroughi M Sivoththaman S	2007	IEEE Electron Device Letters2007，28，7：	1
6	High-frequency performance of diamond field-effect transistor显示文摘	Hirotada Taniuchi Hitoshi Umezawa Takuya Arima	2001	IEEE Electron Device Letters2001，22，8：	1
7	30W/mm GaN HEMTs by field plate optimization显示文摘	Wu Y F Saxler A Moore M	2004	IEEE Electron Device Letters2004，25，3：	1
8	Surface leakage currents in SiN passivated AIGaN/GaN HFETs 显示文摘	TAN W S UREN M J HOUSTON P A	2006	IEEE Electron Device Letters2006，27，1：	1
9	Improved conversion ef- ficiency of textured InGaN solar cells with interdigitated imbedded electrodes显示文摘	Horng R Chu M Chen H	2010	Electron Device Letters IEEE2010，31，：	1
10	High n-type antimony dopant activation in germanium using laser annealing for n+/p junction diode显示文摘	THAREJA G CHOPARA S ADAMS B	2011	IEEE Electron Device Letters2011，32，7：	1
11	Large suspended inductors on silicon and their use in a 2-μm CMOS RF amplifier显示文摘	J Y C Chang A A Abidi M Gaitan	1993	IEEE Electron Device Letters1993，14，5：	1
12	Metal nanoerystal memories-part I: device design and fabrication 显示文摘	LIU Z LEE C NARAYANAN V	2002	IEEE Electron Device Letters2002，49，9：	1
13	NROM:A novel localized trapping,2-bit nonvolatile memory cell显示文摘	BOAZ E PAOLO P ILAN B	2000	IEEE Electron Device Letters2000，21，11：	1
14	A 70 GHz fT low operating bias self-aligned p-type SiGe MODFET 显示文摘	ARAFA M CHU J O ISMAIL K	1996	IEEE Electron Device Letters1996，17，12：	1
15	Arsenic-implanted HfON charge-trapping flash memory with large memory window and good retention显示文摘	TSAI C T LEE T H CHIN A	2011	IEEE Electron Device Letter2011，32，3：	1
16	Temperature dependence of threshold voltage in thin film SOI MOSFETs显示文摘	GROESENEREN G COLLINGE J P MAESH E	1990	IEEE Electron Device Letters1990，1，：	1
17	Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmax of 120 GHz 显示文摘	Ueda K Kasu M Yamauchi Y	2006	IEEE Electron Device Letters2006，27，7：	1
18	Cat-CVD SiNpassivated AlGaN-GaN HFETs with thin and high Al composition barrier layers显示文摘	Higashiwaki M Hirose N Matsui T	2005	IEEE Electron Device Letters2005，26，3：	1
19	A new thin-film transistor pixel structure suppressing the leakage current effects on AMOLED显示文摘	PARK H S SHIN H S LEE W	2009	IEEE Electron Device Letters2009，30，3：	1
20	New unipolar switching power device figures of merit显示文摘	Huang A	2004	IEEE Electronic Device Letters2004，25，4：	1

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