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2864篇 您的检索式：期刊名="Electron Lett"

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	题名	作者	年代	出处	被引量
1	Simple authenticated key agreement algorithm显示文摘	Dong Hwi Seo Sweeney P	1999	Electron Lett1999，35，13：	2
2	Performance limiting micropipe defects in silicon carbide wafers 显示文摘	NEUDECK P G POWELL J A	1994	IEEE Electron Device Lett1994，15，：	2
3	Explicit finite difference beam propagation:application to semiconductor rib waveguide Y-Junction analysis显示文摘	Chung Y Dagli N	1990	Electron Lett1990，26，11：	2
4	Efficient frequency up-conversion via energy transfer in fluoride glassed 显示文摘	Quimby R S Drexhage M G Suscavage M J	1987	Electron Lett1987，23，1：	2
5	New focusing and dispersive planar component based on an optical phased array显示文摘	Simt M K	1988	Electron Lett1988，24，7：	2
6	100 nm bandwidth flat-gain Raman amplifiers pumped and gain-equalised by 12-wavelength-channel WDM laser diode unit显示文摘	Y Emori K Tanaka S Namiki	1999	Electron Lett1999，35，16：	2
7	Linear CMOS triode transconductor for low-voltage application 显示文摘	Likittanapong P	1998	Electron Lett1998，34，6：	2
8	Characterisation of single stage,dual-pumped Raman fibre amplifiers for different gain fibre lengths 显示文摘	KOCH F CHERNIKOV S V LEWIS S A E	2000	Electron Lett2000，36，4：	2
9	Gain saturation in silica-fibre Raman amplifier 显示文摘	LEWIS S A E CHERNIKOV S V TAYLOR J R	1999	Electron Lett1999，35，11：	2
10	Amplitude noise suppression using a high gain phase sensitive amplifier as a limiting amplifier显示文摘	Imajuku W Takada A Yamabayashi Y	1996	Electron Lett1996，32，：	1
11	Optical power limits in muhichannel wavelength-division-multiplexed systems due to stimulated Raman scattering显示文摘	CHRAPLYVY A R	1984	Electron Lett1984，20，19：	1
12	40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology显示文摘	Zhang Y Whelan C S Leoni R	2003	IEEE Electron Device Lett2003，24，9：	1
13	Six-beam piezoresistive accelerometer with self-cancelling cross-axis sensitivity显示文摘	Kim D K Bae Y H	1998	Electron Lett1998，34，5：	1
14	Wavelet-based muhicarrier transmission over muhipath wireless channels显示文摘	Negash B G Nikookar H	2000	Electron Lett2000，36，21：	1
15	Fabrication technique for Si single-electron transistor operating at room temperature 显示文摘	TAKAHASHI Y NAGASE M NAMATSU H	1995	Electron Lett1995，31，2：	1
16	GaN on Si HEMT with 65% power added efficiency at 10 GHz显示文摘	DUMKA D C SAUNIER P	2010	Electron Lett2010，46，13：	1
17	AIInN/ AIN/GaN HEMT technology on SiC with 10 W/mm and 50% PAE at 10 GHz显示文摘	Sarazin N Morvan E Poisson M A F	2010	IEEE Electron Device Lett2010，31，1：	1
18	'AIGaN/ AIN/ GaN high power microwave HEMT'显示文摘	Shen L	2001	IEEE Electron Device Lett2001，22，10：	1
19	Multicarrier modulation with low peak-to-average power ratio显示文摘	Friese M	1996	Electron Lett1996，11，：	1
20	Low voltage four-quadrant analogue CMOS multiplier 显示文摘	Co ban AL Allen PE	1994	Electronics Lett1994，30，13：	1

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